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STP10NK80Z

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STP10NK80Z

FET N-Channel 800V 9A 160W 900MR TO220

FET N-Channel 800V 9A 160W

Specifications

  • Channel Type: N Channel
  • Transistor Polarity: N Channel
  • Continuous Drain Current Id: 9A
  • Drain Source Voltage Vds: 800V
  • Drain Source On State Resistance: 0.78ohm
  • On Resistance Rds(on): 0.78ohm
  • Rds(on) Test Voltage: 10V
  • Transistor Mounting: Through Hole
  • Gate Source Threshold Voltage Max: 3.75V
  • Power Dissipation Pd: 160W
  • Transistor Case Style: TO-220
  • Power Dissipation: 160W
  • No. of Pins: 3Pins
  • Operating Temperature Max: 150°C

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Additional Information

Device Transistor
$3.68
STP10NK80Z—
$3.68

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Description

FET N-Channel 800V 9A 160W 900MR TO220

FET N-Channel 800V 9A 160W

Specifications

  • Channel Type: N Channel
  • Transistor Polarity: N Channel
  • Continuous Drain Current Id: 9A
  • Drain Source Voltage Vds: 800V
  • Drain Source On State Resistance: 0.78ohm
  • On Resistance Rds(on): 0.78ohm
  • Rds(on) Test Voltage: 10V
  • Transistor Mounting: Through Hole
  • Gate Source Threshold Voltage Max: 3.75V
  • Power Dissipation Pd: 160W
  • Transistor Case Style: TO-220
  • Power Dissipation: 160W
  • No. of Pins: 3Pins
  • Operating Temperature Max: 150°C

Downloads

Additional Information

Device Transistor
STP10NK80Z | Communica