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STGW80H65DFB

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STGW80H65DFB

IGBT 650V 120A 469W TO247

Features

  • Maximum junction temperature: TJ = 175 °C
  • High speed switching series
  • Minimized tail current
  • Very low saturation voltage: VCE(sat) = 1.6 V (typ.) @ IC= 80 A
  • Tight parameters distribution
  • Safe paralleling
  • Low thermal resistance
  • Very fast soft recovery antiparallel diode
  • Lead free package

Downloads

Additional Information

Device Transistor
$10.59
STGW80H65DFB—
$10.59

Product Information

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Description

IGBT 650V 120A 469W TO247

Features

  • Maximum junction temperature: TJ = 175 °C
  • High speed switching series
  • Minimized tail current
  • Very low saturation voltage: VCE(sat) = 1.6 V (typ.) @ IC= 80 A
  • Tight parameters distribution
  • Safe paralleling
  • Low thermal resistance
  • Very fast soft recovery antiparallel diode
  • Lead free package

Downloads

Additional Information

Device Transistor
STGW80H65DFB | Communica