SIHG80N60EF-GE3
N-CH MOSFET 600V 80A Rds On (Max) 32mΩ TO247AC
N-CH MOSFET 600V 80A Rds
Specifications
|
FET Type
|
N-Channel |
|
Technology
|
MOSFET (Metal Oxide) |
|
Drain to Source Voltage (Vdss)
|
600 V
|
|
Current - Continuous Drain (Id) @ 25°C
|
80A (Tc) |
|
Drive Voltage (Max Rds On, Min Rds On)
|
10V
|
|
Rds On (Max) @ Id, Vgs
|
32mOhm @ 40A, 10V
|
|
Vgs(th) (Max) @ Id
|
4V @ 250µA
|
|
Gate Charge (Qg) (Max) @ Vgs
|
400 nC @ 10 V
|
|
Vgs (Max)
|
±30V
|
|
Input Capacitance (Ciss) (Max) @ Vds
|
6600 pF @ 100 V
|
|
Power Dissipation (Max)
|
520W (Tc)
|
|
Operating Temperature
|
-55°C ~ 150°C (TJ)
|
|
Mounting Type
|
Through Hole
|
|
Supplier Device Package
|
TO-247AC
|
|
Package / Case
|
TO-247-3 |
Downloads
Additional Information
| Device | MOSFET |
| Type | N-CH | 600V | 80A | Rds |
$5.59
SIHG80N60EF-GE3—
$5.59
Product Information
Product Information
Shipping & Returns
Shipping & Returns
Description
N-CH MOSFET 600V 80A Rds On (Max) 32mΩ TO247AC
N-CH MOSFET 600V 80A Rds
Specifications
|
FET Type
|
N-Channel |
|
Technology
|
MOSFET (Metal Oxide) |
|
Drain to Source Voltage (Vdss)
|
600 V
|
|
Current - Continuous Drain (Id) @ 25°C
|
80A (Tc) |
|
Drive Voltage (Max Rds On, Min Rds On)
|
10V
|
|
Rds On (Max) @ Id, Vgs
|
32mOhm @ 40A, 10V
|
|
Vgs(th) (Max) @ Id
|
4V @ 250µA
|
|
Gate Charge (Qg) (Max) @ Vgs
|
400 nC @ 10 V
|
|
Vgs (Max)
|
±30V
|
|
Input Capacitance (Ciss) (Max) @ Vds
|
6600 pF @ 100 V
|
|
Power Dissipation (Max)
|
520W (Tc)
|
|
Operating Temperature
|
-55°C ~ 150°C (TJ)
|
|
Mounting Type
|
Through Hole
|
|
Supplier Device Package
|
TO-247AC
|
|
Package / Case
|
TO-247-3 |
Downloads
Additional Information
| Device | MOSFET |
| Type | N-CH | 600V | 80A | Rds |
