NCE01P30K
P-Channel Enhancement Mode Power Mosfet , VDS=-100V , ID=-30A , Maximum Power Dissipation:120W , Temp Range:-55~175℃ , RDS(ON)<58mΩ , TO-252-2L
P-Channel Enhancement Mode Power Mosfet
Features
- VDS =-100V,ID =-30A
- RDS(ON) <58mΩ @ VGS=-10V (Typ:44mΩ)
- RDS(ON) <65mΩ @ VGS=-10V (Typ:48mΩ)
- Super high dense cell design
- Advanced trench process technology
- Reliable and rugged
- High density cell design for ultra low On-Resistance
Downloads
Additional Information
| Device | Mosfet |
| Type | P-Channel | Enhancement Mode | Power |
$1.32
NCE01P30K—
$1.32
Product Information
Product Information
Shipping & Returns
Shipping & Returns
Description
P-Channel Enhancement Mode Power Mosfet , VDS=-100V , ID=-30A , Maximum Power Dissipation:120W , Temp Range:-55~175℃ , RDS(ON)<58mΩ , TO-252-2L
P-Channel Enhancement Mode Power Mosfet
Features
- VDS =-100V,ID =-30A
- RDS(ON) <58mΩ @ VGS=-10V (Typ:44mΩ)
- RDS(ON) <65mΩ @ VGS=-10V (Typ:48mΩ)
- Super high dense cell design
- Advanced trench process technology
- Reliable and rugged
- High density cell design for ultra low On-Resistance
Downloads
Additional Information
| Device | Mosfet |
| Type | P-Channel | Enhancement Mode | Power |
