MJE15031
P 150V 4A 20MN 50W TO220
P 150V 4A 20MN 50W TO220
Specifications
-
- Type: PNP
- Collector-Emitter Voltage, max: -150 V
- Collector-Base Voltage, max: -150 V
- Emitter-Base Voltage, max: -5 V
- Collector Current − Continuous, max: -8 A
- Collector Dissipation: 50 W
- DC Current Gain (hfe): 40
- Transition Frequency, min: 30 MHz
- Operating and Storage Junction Temperature Range: -65 to +150 °C
- Package: TO-220
Additional Information
| Frequency Response | 30MHz |
| Import Data | SI-P 150V 8A 50W 30MHz |
| Keywords | BJT |
| Device | Transistor |
| Type | Bipolar Junction |
$0.96
MJE15031—
$0.96
Product Information
Product Information
Shipping & Returns
Shipping & Returns
Description
P 150V 4A 20MN 50W TO220
P 150V 4A 20MN 50W TO220
Specifications
-
- Type: PNP
- Collector-Emitter Voltage, max: -150 V
- Collector-Base Voltage, max: -150 V
- Emitter-Base Voltage, max: -5 V
- Collector Current − Continuous, max: -8 A
- Collector Dissipation: 50 W
- DC Current Gain (hfe): 40
- Transition Frequency, min: 30 MHz
- Operating and Storage Junction Temperature Range: -65 to +150 °C
- Package: TO-220
Additional Information
| Frequency Response | 30MHz |
| Import Data | SI-P 150V 8A 50W 30MHz |
| Keywords | BJT |
| Device | Transistor |
| Type | Bipolar Junction |
