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MJ901

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MJ901

P 80V 80V 8A 750MN TO3

P 80V 80V 8A 750MN TO3

Specifications

  • Material of transistor: Si
  • Polarity: PNP
  • Maximum collector power dissipation (Pc), W: 90
  • Maximum collector-base voltage |Ucb|, V: 80
  • Maximum collector-emitter voltage |Uce|, V: 80
  • Maximum emitter-base voltage |Ueb|, V: 5
  • Maximum collector current |Ic max|, A: 10
  • Maksimalna temperatura (Tj), °C: 200
  • Transition frequency (ft), MHz:
  • Collector capacitance (Cc), pF:
  • Forward current transfer ratio (hFE), min: 750
  • Package of MJ901 transistor: TO3

Downloads

Additional Information

CatGroup Transistor
Device Transistor
$0.15

Original: $0.50

-70%
MJ901—

$0.50

$0.15

Product Information

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Description

P 80V 80V 8A 750MN TO3

P 80V 80V 8A 750MN TO3

Specifications

  • Material of transistor: Si
  • Polarity: PNP
  • Maximum collector power dissipation (Pc), W: 90
  • Maximum collector-base voltage |Ucb|, V: 80
  • Maximum collector-emitter voltage |Uce|, V: 80
  • Maximum emitter-base voltage |Ueb|, V: 5
  • Maximum collector current |Ic max|, A: 10
  • Maksimalna temperatura (Tj), °C: 200
  • Transition frequency (ft), MHz:
  • Collector capacitance (Cc), pF:
  • Forward current transfer ratio (hFE), min: 750
  • Package of MJ901 transistor: TO3

Downloads

Additional Information

CatGroup Transistor
Device Transistor