IRFIZ48N
SIP MOS N-CH 55V 36A 0.016R TO220
Specifications
|
FET Type
|
N-Channel
|
|
Technology
|
MOSFET (Metal Oxide)
|
|
Drain to Source Voltage (Vdss)
|
55 V
|
|
Current - Continuous Drain (Id) @ 25°C
|
36A (Tc)
|
|
Drive Voltage (Max Rds On, Min Rds On)
|
10V
|
|
Rds On (Max) @ Id, Vgs
|
16mOhm @ 22A, 10V
|
|
Vgs(th) (Max) @ Id
|
4V @ 250µA
|
|
Gate Charge (Qg) (Max) @ Vgs
|
89 nC @ 10 V
|
|
Vgs (Max)
|
±20V
|
|
Input Capacitance (Ciss) (Max) @ Vds
|
1900 pF @ 25 V
|
|
Power Dissipation (Max)
|
42W (Tc)
|
|
Operating Temperature
|
-55°C ~ 175°C (TJ)
|
|
Mounting Type
|
Through Hole
|
|
Supplier Device Package
|
PG-TO220-FP
|
Downloads
Additional Information
| CatGroup | Field Effect Transistor |
| Device | Thransistor |
$1.17
IRFIZ48N—
$1.17
Product Information
Product Information
Shipping & Returns
Shipping & Returns
Description
SIP MOS N-CH 55V 36A 0.016R TO220
Specifications
|
FET Type
|
N-Channel
|
|
Technology
|
MOSFET (Metal Oxide)
|
|
Drain to Source Voltage (Vdss)
|
55 V
|
|
Current - Continuous Drain (Id) @ 25°C
|
36A (Tc)
|
|
Drive Voltage (Max Rds On, Min Rds On)
|
10V
|
|
Rds On (Max) @ Id, Vgs
|
16mOhm @ 22A, 10V
|
|
Vgs(th) (Max) @ Id
|
4V @ 250µA
|
|
Gate Charge (Qg) (Max) @ Vgs
|
89 nC @ 10 V
|
|
Vgs (Max)
|
±20V
|
|
Input Capacitance (Ciss) (Max) @ Vds
|
1900 pF @ 25 V
|
|
Power Dissipation (Max)
|
42W (Tc)
|
|
Operating Temperature
|
-55°C ~ 175°C (TJ)
|
|
Mounting Type
|
Through Hole
|
|
Supplier Device Package
|
PG-TO220-FP
|
Downloads
Additional Information
| CatGroup | Field Effect Transistor |
| Device | Thransistor |
