IRFB4410

N-MOSFET 100V 97A 230W TO220 Rds = 7,2 - 9 mOhm

N-MOSFET 100V 97A 230W TO220

Channel Type	N
Maximum Continuous Drain Current	88 A
Maximum Drain Source Voltage	100 V
Package Type	TO-220AB
Mounting Type	Through Hole
Pin Count	3
Maximum Drain Source Resistance	10 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	4V
Minimum Gate Threshold Voltage	2V
Maximum Power Dissipation	200 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-20 V, +20 V
Maximum Operating Temperature	+175 °C
Length	10.66mm
Width	4.82mm
Transistor Material	Si
Typical Gate Charge @ Vgs	120 nC @ 10 V
Number of Elements per Chip	1
Minimum Operating Temperature	-55 °C
Height	9.02mm
Series	HEXFET

Device

Transistor

$1.91

IRFB4410—

$1.91

IRFB4410—

$1.91

N-MOSFET 100V 97A 230W TO220 Rds = 7,2 - 9 mOhm

Channel Type	N
Maximum Continuous Drain Current	88 A
Maximum Drain Source Voltage	100 V
Package Type	TO-220AB
Mounting Type	Through Hole
Pin Count	3
Maximum Drain Source Resistance	10 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	4V
Minimum Gate Threshold Voltage	2V
Maximum Power Dissipation	200 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-20 V, +20 V
Maximum Operating Temperature	+175 °C
Length	10.66mm
Width	4.82mm
Transistor Material	Si
Typical Gate Charge @ Vgs	120 nC @ 10 V
Number of Elements per Chip	1
Minimum Operating Temperature	-55 °C
Height	9.02mm
Series	HEXFET

Device

Transistor