IRFB23N15D

N-MOSFET 150V 23A 0.090Ω 136W TO220AB

150V 23A 0.090Ω 136W TO220AB

Channel Type	N
Maximum Continuous Drain Current	23 A
Maximum Drain Source Voltage	150 V
Package Type	TO-220AB
Mounting Type	Through Hole
Pin Count	3
Maximum Drain Source Resistance	90 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	5.5V
Minimum Gate Threshold Voltage	3V
Maximum Power Dissipation	136 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-30 V, +30 V
Number of Elements per Chip	1
Length	10.54mm
Maximum Operating Temperature	+175 °C
Transistor Material	Si
Typical Gate Charge @ Vgs	37 nC @ 10 V
Width	4.69mm
Minimum Operating Temperature	-55 °C
Height	19.3mm
Series	HEXFET

Device

Transistor

$2.15

IRFB23N15D—

$2.15

IRFB23N15D—

$2.15

N-MOSFET 150V 23A 0.090Ω 136W TO220AB

Channel Type	N
Maximum Continuous Drain Current	23 A
Maximum Drain Source Voltage	150 V
Package Type	TO-220AB
Mounting Type	Through Hole
Pin Count	3
Maximum Drain Source Resistance	90 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	5.5V
Minimum Gate Threshold Voltage	3V
Maximum Power Dissipation	136 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-30 V, +30 V
Number of Elements per Chip	1
Length	10.54mm
Maximum Operating Temperature	+175 °C
Transistor Material	Si
Typical Gate Charge @ Vgs	37 nC @ 10 V
Width	4.69mm
Minimum Operating Temperature	-55 °C
Height	19.3mm
Series	HEXFET

Device

Transistor