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IRF2804

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IRF2804

N-MOSFET 40V 75A TO220 (RDS= 0,002 OHM)

N-MOSFET 40V 75A TO220

Specifications

FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
40 V
Current - Continuous Drain (Id) @ 25°C
75A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
2.3mOhm @ 75A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
240 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
6450 pF @ 25 V
Power Dissipation (Max)
330W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-220AB

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Additional Information

Device Transistor
$0.61

Original: $2.02

-70%
IRF2804

$2.02

$0.61

Product Information

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Description

N-MOSFET 40V 75A TO220 (RDS= 0,002 OHM)

N-MOSFET 40V 75A TO220

Specifications

FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
40 V
Current - Continuous Drain (Id) @ 25°C
75A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
2.3mOhm @ 75A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
240 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
6450 pF @ 25 V
Power Dissipation (Max)
330W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-220AB

Downloads

Additional Information

Device Transistor