GE6060
N 400V 350V 20A 40MN TO3
N 400V 350V 20A 40MN TO3
Specifications
- Collector–Base Voltage (VCBO): 400 V
- Collector–Emitter Voltage (VCEO): 350 V
- Emitter–Base Voltage (VEBO): 5 V
- Collector Current (IC): 20 A continuous
- Peak repetitive: 25 A
- Non-repetitive pulse: 42.5 A
- Total Power Dissipation (PC): 125 W
- Junction & Storage Temperature (TJ, Tstg): –65 °C to +150 °C
Additional Information
| CatGroup | Transistor |
| Device | Transistor |
$2.09
GE6060—
$2.09
Product Information
Product Information
Shipping & Returns
Shipping & Returns
Description
N 400V 350V 20A 40MN TO3
N 400V 350V 20A 40MN TO3
Specifications
- Collector–Base Voltage (VCBO): 400 V
- Collector–Emitter Voltage (VCEO): 350 V
- Emitter–Base Voltage (VEBO): 5 V
- Collector Current (IC): 20 A continuous
- Peak repetitive: 25 A
- Non-repetitive pulse: 42.5 A
- Total Power Dissipation (PC): 125 W
- Junction & Storage Temperature (TJ, Tstg): –65 °C to +150 °C
Additional Information
| CatGroup | Transistor |
| Device | Transistor |
