BU426AF
N 900V 400V 8A 60MX TOP3 Isolated
N 900V 400V 8A 60MX TOP3 Isolated
Specifications
- Transistor Type: NPN Silicon Power Transistor
- Collector‑Emitter Sustaining Voltage (V<sub>CEO(sus)</sub>): ≥ 400 V
- Collector‑Emitter Breakdown Voltage (V<sub>CEO</sub>): ~900 V
- Collector‑Base Voltage (V<sub>CBO</sub>): ~900 V
- Emitter‑Base Voltage (V<sub>EBO</sub>): ~10 V
- Continuous Collector Current (I<sub>C</sub>): ~6 A
- Peak / Pulse Collector Current: ~10 A
- Power Dissipation (P<sub>C</sub>): ~70 W (at 25 °C case temperature)
- Operating Junction Temperature: −65 °C to +150 °C
- Package: ISOWATT218 / TO‑3PML‑style high‑power package
$0.53
BU426AF—
$0.53
Product Information
Product Information
Shipping & Returns
Shipping & Returns
Description
N 900V 400V 8A 60MX TOP3 Isolated
N 900V 400V 8A 60MX TOP3 Isolated
Specifications
- Transistor Type: NPN Silicon Power Transistor
- Collector‑Emitter Sustaining Voltage (V<sub>CEO(sus)</sub>): ≥ 400 V
- Collector‑Emitter Breakdown Voltage (V<sub>CEO</sub>): ~900 V
- Collector‑Base Voltage (V<sub>CBO</sub>): ~900 V
- Emitter‑Base Voltage (V<sub>EBO</sub>): ~10 V
- Continuous Collector Current (I<sub>C</sub>): ~6 A
- Peak / Pulse Collector Current: ~10 A
- Power Dissipation (P<sub>C</sub>): ~70 W (at 25 °C case temperature)
- Operating Junction Temperature: −65 °C to +150 °C
- Package: ISOWATT218 / TO‑3PML‑style high‑power package
