BU326A
N 900V 400V 6A 30MN TO3A
N 900V 400V 6A 30MN TO3A
Specifications
- Transistor Type: NPN bipolar power transistor
- Package: TO‑3 metal can (high power package)
- Collector‑Emitter Voltage (Vceo): ~400 V (continuous)
- Collector‑Emitter Voltage (VCES rated with VBE = 0): ~900 V (max dielectric strength)
- Continuous Collector Current (Ic): ~6 A
- Peak Collector Current (Icm): ~8 A
- Power Dissipation: ~60–75 W (depending on source and conditions)
- Frequency / Transition: ~4 MHz typical
- Operating Temp: about –65 °C to 200 °C
Additional Information
| Device | Transistor |
$0.58
BU326A—
$0.58
Product Information
Product Information
Shipping & Returns
Shipping & Returns
Description
N 900V 400V 6A 30MN TO3A
N 900V 400V 6A 30MN TO3A
Specifications
- Transistor Type: NPN bipolar power transistor
- Package: TO‑3 metal can (high power package)
- Collector‑Emitter Voltage (Vceo): ~400 V (continuous)
- Collector‑Emitter Voltage (VCES rated with VBE = 0): ~900 V (max dielectric strength)
- Continuous Collector Current (Ic): ~6 A
- Peak Collector Current (Icm): ~8 A
- Power Dissipation: ~60–75 W (depending on source and conditions)
- Frequency / Transition: ~4 MHz typical
- Operating Temp: about –65 °C to 200 °C
Additional Information
| Device | Transistor |
