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BU2508A

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BU2508A

SI-N 1500V 8A 125W 0.4us

N 1500V 8A 125W 0,4US TO-3PN

Specifications

  • Transistor Type: NPN Bipolar Power Transistor
  • Package: TO-3P / TO-218 style power package
  • Collector-Emitter Voltage (Vceo): 900 V
  • Collector-Base Voltage (Vcbo): 1200 V
  • Emitter-Base Voltage (Vebo): 5 V
  • Continuous Collector Current (Ic): 8 A
  • Peak Collector Current (Icm): 15 A
  • Power Dissipation (Pc): ~90 W
  • Transition Frequency (fT): ~3 MHz
  • Operating Junction Temperature: −65 °C to +150 °C

Additional Information

Device Transistor
$1.17
BU2508A—
$1.17

Product Information

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Description

SI-N 1500V 8A 125W 0.4us

N 1500V 8A 125W 0,4US TO-3PN

Specifications

  • Transistor Type: NPN Bipolar Power Transistor
  • Package: TO-3P / TO-218 style power package
  • Collector-Emitter Voltage (Vceo): 900 V
  • Collector-Base Voltage (Vcbo): 1200 V
  • Emitter-Base Voltage (Vebo): 5 V
  • Continuous Collector Current (Ic): 8 A
  • Peak Collector Current (Icm): 15 A
  • Power Dissipation (Pc): ~90 W
  • Transition Frequency (fT): ~3 MHz
  • Operating Junction Temperature: −65 °C to +150 °C

Additional Information

Device Transistor