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BSY27

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BSY27

Transistor N 20V 15V 100MA 40MN TO18

Specifications

  • Material of Transistor : Si
  • Polarity : NPN
  • Maximum Collector Power Dissipation : 0.3 W
  • Maximum Collector-Base Voltage : 20 V
  • Maximum Collector-Emitter Voltage : 15 V
  • Maximum Emitter-Base Voltage : 6 V
  • Maximum Collector Current : 0.1 A
  • Maximum Operating Junction Temperature: 200 °C
  • Transition Frequency : 200 MHz
  • Forward Current Transfer Ratio (hFE Value): 40
  • Collector Capacitance : 6 pF
  • Package : TO18

Additional Information

Device Transistor
$0.03

Original: $0.11

-73%
BSY27—

$0.11

$0.03

Product Information

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Description

Transistor N 20V 15V 100MA 40MN TO18

Specifications

  • Material of Transistor : Si
  • Polarity : NPN
  • Maximum Collector Power Dissipation : 0.3 W
  • Maximum Collector-Base Voltage : 20 V
  • Maximum Collector-Emitter Voltage : 15 V
  • Maximum Emitter-Base Voltage : 6 V
  • Maximum Collector Current : 0.1 A
  • Maximum Operating Junction Temperature: 200 °C
  • Transition Frequency : 200 MHz
  • Forward Current Transfer Ratio (hFE Value): 40
  • Collector Capacitance : 6 pF
  • Package : TO18

Additional Information

Device Transistor