BF450
P 40V 40V 25MA 60MN X10
P 40V 40V 25MA 60MN X10
Specifications
- Type Designator: BF450
- Material of Transistor: Si
- Polarity: PNP
- Maximum Collector Power Dissipation (Pc): 0.15 W
- Maximum Collector-Base Voltage |Vcb|: 40 V
- Maximum Collector-Emitter Voltage |Vce|: 40 V
- Maximum Emitter-Base Voltage |Veb|: 4 V
- Maximum Collector Current |Ic max|: 0.025 A
- Operating Junction Temperature (Tj): 125 °C
- Transition Frequency (ft): 325 MHz
- Collector Capacitance (Cc): 0.7 pF
- Forward Current Transfer Ratio (hFE), MIN: 60
- Noise Figure, dB: -
- Package: TO92
Additional Information
| Frequency Response | 375MHz |
| Import Data | SI-P 40V 25mA 375MHz .25W |
| Keywords | BJT |
| Device | Transistor |
| Type | Bipolar Junction |
| Polarity | PNP |
| Material | Silicon |
| Power Dissipation | 0.25A |
$0.01
Original: $0.04
-75%BF450—
$0.04
$0.01Product Information
Product Information
Shipping & Returns
Shipping & Returns
Description
P 40V 40V 25MA 60MN X10
P 40V 40V 25MA 60MN X10
Specifications
- Type Designator: BF450
- Material of Transistor: Si
- Polarity: PNP
- Maximum Collector Power Dissipation (Pc): 0.15 W
- Maximum Collector-Base Voltage |Vcb|: 40 V
- Maximum Collector-Emitter Voltage |Vce|: 40 V
- Maximum Emitter-Base Voltage |Veb|: 4 V
- Maximum Collector Current |Ic max|: 0.025 A
- Operating Junction Temperature (Tj): 125 °C
- Transition Frequency (ft): 325 MHz
- Collector Capacitance (Cc): 0.7 pF
- Forward Current Transfer Ratio (hFE), MIN: 60
- Noise Figure, dB: -
- Package: TO92
Additional Information
| Frequency Response | 375MHz |
| Import Data | SI-P 40V 25mA 375MHz .25W |
| Keywords | BJT |
| Device | Transistor |
| Type | Bipolar Junction |
| Polarity | PNP |
| Material | Silicon |
| Power Dissipation | 0.25A |
