🎉 Up to 70% Off Selected ItemsShop Sale
HomeStore

BD538

Product image 1

BD538

P 80V 80V 4A 40MN TOP66

P 80V 80V 4A 40MN TOP66

Specifications

  • Material of Transistor: Si
  • Polarity: PNP
  • Maximum Collector Power Dissipation (Pc): 40 W
  • Maximum Collector-Base Voltage |Vcb|: 80 V
  • Maximum Collector-Emitter Voltage |Vce|: 80 V
  • Maximum Emitter-Base Voltage |Veb|: 5 V
  • Maximum Collector Current |Ic max|: 4 A
  • Max. Operating Junction Temperature (Tj): 150 °C
  • Transition Frequency (ft): 3 MHz
  • Forward Current Transfer Ratio (hFE), MIN: 40
  • Package: TO220

Downloads

Additional Information

Device Transistor
$0.09

Original: $0.29

-69%
BD538—

$0.29

$0.09

Product Information

Shipping & Returns

Description

P 80V 80V 4A 40MN TOP66

P 80V 80V 4A 40MN TOP66

Specifications

  • Material of Transistor: Si
  • Polarity: PNP
  • Maximum Collector Power Dissipation (Pc): 40 W
  • Maximum Collector-Base Voltage |Vcb|: 80 V
  • Maximum Collector-Emitter Voltage |Vce|: 80 V
  • Maximum Emitter-Base Voltage |Veb|: 5 V
  • Maximum Collector Current |Ic max|: 4 A
  • Max. Operating Junction Temperature (Tj): 150 °C
  • Transition Frequency (ft): 3 MHz
  • Forward Current Transfer Ratio (hFE), MIN: 40
  • Package: TO220

Downloads

Additional Information

Device Transistor