BD442
P 80V 80V 4A 15MN TO126
P 80V 80V 4A 15MN TO126
Specifications
- Material of Transistor: Si
- Polarity: PNP
- Maximum Collector Power Dissipation (Pc): 36 W
- Maximum Collector-Base Voltage |Vcb|: 80 V
- Maximum Collector-Emitter Voltage |Vce|: 80 V
- Maximum Emitter-Base Voltage |Veb|: 5 V
- Maximum Collector Current |Ic max|: 4 A
- Max. Operating Junction Temperature (Tj): 150 °C
- Transition Frequency (ft): 3 MHz
- Forward Current Transfer Ratio (hFE), MIN: 15
- Package: TO126
Additional Information
| Device | Transistor |
$0.05
Original: $0.16
-69%BD442—
$0.16
$0.05Product Information
Product Information
Shipping & Returns
Shipping & Returns
Description
P 80V 80V 4A 15MN TO126
P 80V 80V 4A 15MN TO126
Specifications
- Material of Transistor: Si
- Polarity: PNP
- Maximum Collector Power Dissipation (Pc): 36 W
- Maximum Collector-Base Voltage |Vcb|: 80 V
- Maximum Collector-Emitter Voltage |Vce|: 80 V
- Maximum Emitter-Base Voltage |Veb|: 5 V
- Maximum Collector Current |Ic max|: 4 A
- Max. Operating Junction Temperature (Tj): 150 °C
- Transition Frequency (ft): 3 MHz
- Forward Current Transfer Ratio (hFE), MIN: 15
- Package: TO126
Additional Information
| Device | Transistor |
