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BD436

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BD436

P 32V 32V 4A 63/160 TO126

P 32V 32V 4A 63/160 TO126

Specifications

  • Type Designator: BD436
  • Material of Transistor: Si
  • Polarity: PNP
  • Maximum Collector Power Dissipation (Pc): 36 W
  • Maximum Collector-Base Voltage |Vcb|: 32 V
  • Maximum Collector-Emitter Voltage |Vce|: 32 V
  • Maximum Emitter-Base Voltage |Veb|: 5 V
  • Maximum Collector Current |Ic max|: 4 A
  • Operating Junction Temperature (Tj): 150 °C
  • Transition Frequency (ft): 3 MHz
  • Forward Current Transfer Ratio (hFE), MIN: 50
  • Noise Figure, dB: -
  • Package: TO126

Additional Information

Device Transistor
Type 32V 32V 4A 63/160 TO126
$0.05

Original: $0.16

-69%
BD436—

$0.16

$0.05

Product Information

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Description

P 32V 32V 4A 63/160 TO126

P 32V 32V 4A 63/160 TO126

Specifications

  • Type Designator: BD436
  • Material of Transistor: Si
  • Polarity: PNP
  • Maximum Collector Power Dissipation (Pc): 36 W
  • Maximum Collector-Base Voltage |Vcb|: 32 V
  • Maximum Collector-Emitter Voltage |Vce|: 32 V
  • Maximum Emitter-Base Voltage |Veb|: 5 V
  • Maximum Collector Current |Ic max|: 4 A
  • Operating Junction Temperature (Tj): 150 °C
  • Transition Frequency (ft): 3 MHz
  • Forward Current Transfer Ratio (hFE), MIN: 50
  • Noise Figure, dB: -
  • Package: TO126

Additional Information

Device Transistor
Type 32V 32V 4A 63/160 TO126