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BD176

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BD176

P 45V 45V A 40MN TO126

P 45V 45V A 40MN TO126

Specifications

  • Type Designator: BD176
  • Material of Transistor: Si
  • Polarity: PNP
  • Maximum Collector Power Dissipation (Pc): 30 W
  • Maximum Collector-Base Voltage |Vcb|: 45 V
  • Maximum Collector-Emitter Voltage |Vce|: 45 V
  • Maximum Emitter-Base Voltage |Veb|: 5 V
  • Maximum Collector Current |Ic max|: 3 A
  • Operating Junction Temperature (Tj): 135 °C
  • Transition Frequency (ft): 3 MHz
  • Forward Current Transfer Ratio (hFE), MIN: 40
  • Noise Figure, dB: -
  • Package: TO126

Additional Information

Device Transistor
Type 45V 45V A 40MN TO126
$0.03

Original: $0.10

-70%
BD176—

$0.10

$0.03

Product Information

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Description

P 45V 45V A 40MN TO126

P 45V 45V A 40MN TO126

Specifications

  • Type Designator: BD176
  • Material of Transistor: Si
  • Polarity: PNP
  • Maximum Collector Power Dissipation (Pc): 30 W
  • Maximum Collector-Base Voltage |Vcb|: 45 V
  • Maximum Collector-Emitter Voltage |Vce|: 45 V
  • Maximum Emitter-Base Voltage |Veb|: 5 V
  • Maximum Collector Current |Ic max|: 3 A
  • Operating Junction Temperature (Tj): 135 °C
  • Transition Frequency (ft): 3 MHz
  • Forward Current Transfer Ratio (hFE), MIN: 40
  • Noise Figure, dB: -
  • Package: TO126

Additional Information

Device Transistor
Type 45V 45V A 40MN TO126