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BC559C

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BC559C

P 30V 25V 100MA 420MN TO92

P 30V 25V 100MA 420MN TO9

Specifications

  • Type: PNP
  • Collector-Emitter Voltage, max: -30 V
  • Collector-Base Voltage, max: -30 V
  • Emitter-Base Voltage, max: -5 V
  • Collector Current − Continuous, max: -0.1 A
  • Collector Dissipation: 0.5 W
  • DC Current Gain (hfe): 420 to 800
  • Transition Frequency, min: 150 MHz
  • Noise Figure, max: 1 dB
  • Operating and Storage Junction Temperature Range: -65 to +150 °C
  • Package: TO-92

Additional Information

Device Transistor
Type 30V 25V 100MA 420MN TO9
$0.01

Original: $0.02

-50%
BC559C

$0.02

$0.01

Product Information

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Description

P 30V 25V 100MA 420MN TO92

P 30V 25V 100MA 420MN TO9

Specifications

  • Type: PNP
  • Collector-Emitter Voltage, max: -30 V
  • Collector-Base Voltage, max: -30 V
  • Emitter-Base Voltage, max: -5 V
  • Collector Current − Continuous, max: -0.1 A
  • Collector Dissipation: 0.5 W
  • DC Current Gain (hfe): 420 to 800
  • Transition Frequency, min: 150 MHz
  • Noise Figure, max: 1 dB
  • Operating and Storage Junction Temperature Range: -65 to +150 °C
  • Package: TO-92

Additional Information

Device Transistor
Type 30V 25V 100MA 420MN TO9