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BC558A

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BC558A

P 30V 25V 100MA 125MN X10

P 30V 25V 100MA 125MN X10

Specifications

  • Type Designator: BC558A
  • Material of Transistor: Si
  • Polarity: PNP
  • Maximum Collector Power Dissipation (Pc): 0.5 W
  • Maximum Collector-Base Voltage |Vcb|: 30 V
  • Maximum Collector-Emitter Voltage |Vce|: 25 V
  • Maximum Emitter-Base Voltage |Veb|: 5 V
  • Maximum Collector Current |Ic max|: 0.1 A
  • Operating Junction Temperature (Tj): 150 °C
  • Transition Frequency (ft): 75 MHz
  • Collector Capacitance (Cc): 7 pF
  • Forward Current Transfer Ratio (hFE), MIN: 125
  • Noise Figure, dB: -
  • Package: TO92

Additional Information

Device Transistor
Type 30V 25V 100MA 125MN X10
$0.02
BC558A—
$0.02

Product Information

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Description

P 30V 25V 100MA 125MN X10

P 30V 25V 100MA 125MN X10

Specifications

  • Type Designator: BC558A
  • Material of Transistor: Si
  • Polarity: PNP
  • Maximum Collector Power Dissipation (Pc): 0.5 W
  • Maximum Collector-Base Voltage |Vcb|: 30 V
  • Maximum Collector-Emitter Voltage |Vce|: 25 V
  • Maximum Emitter-Base Voltage |Veb|: 5 V
  • Maximum Collector Current |Ic max|: 0.1 A
  • Operating Junction Temperature (Tj): 150 °C
  • Transition Frequency (ft): 75 MHz
  • Collector Capacitance (Cc): 7 pF
  • Forward Current Transfer Ratio (hFE), MIN: 125
  • Noise Figure, dB: -
  • Package: TO92

Additional Information

Device Transistor
Type 30V 25V 100MA 125MN X10