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BC557A
SI-P 50V 0.2A 0.5W
P 50V 45V 100MA 125MN TO92
Specifications
- Type: PNP
- Collector-Emitter Voltage, max: -45 V
- Collector-Base Voltage, max: -50 V
- Emitter-Base Voltage, max: -5 V
- Collector Current − Continuous, max: -0.1 A
- Collector Dissipation: 0.5 W
- DC Current Gain (hfe): 110 to 220
- Transition Frequency, min: 150 MHz
- Noise Figure, max: 2 dB
- Operating and Storage Junction Temperature Range: -65 to +150 °C
- Package: TO-92
Additional Information
| Import Data | SI-P 50V 0.2A 0.5W |
| Keywords | BJT |
| Device | Transistor |
| Type | Bipolar Junction |
| Polarity | PNP |
| Material | Silicon |
| Power Dissipation | 0.5A |
$0.03
BC557A—
$0.03
Product Information
Product Information
Shipping & Returns
Shipping & Returns
Description
SI-P 50V 0.2A 0.5W
P 50V 45V 100MA 125MN TO92
Specifications
- Type: PNP
- Collector-Emitter Voltage, max: -45 V
- Collector-Base Voltage, max: -50 V
- Emitter-Base Voltage, max: -5 V
- Collector Current − Continuous, max: -0.1 A
- Collector Dissipation: 0.5 W
- DC Current Gain (hfe): 110 to 220
- Transition Frequency, min: 150 MHz
- Noise Figure, max: 2 dB
- Operating and Storage Junction Temperature Range: -65 to +150 °C
- Package: TO-92
Additional Information
| Import Data | SI-P 50V 0.2A 0.5W |
| Keywords | BJT |
| Device | Transistor |
| Type | Bipolar Junction |
| Polarity | PNP |
| Material | Silicon |
| Power Dissipation | 0.5A |
