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BC178C

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BC178C

P 30V 25V 200MA 70MN TO18

P 30V 25V 200MA 70MN TO18

Specifications

  • Type Designator: BC178C
  • Material of Transistor: Si
  • Polarity: PNP
  • Maximum Collector Power Dissipation (Pc): 0.3 W
  • Maximum Collector-Base Voltage |Vcb|: 30 V
  • Maximum Collector-Emitter Voltage |Vce|: 25 V
  • Maximum Emitter-Base Voltage |Veb|: 5 V
  • Maximum Collector Current |Ic max|: 0.2 A
  • Operating Junction Temperature (Tj): 175 °C
  • Transition Frequency (ft): 100 MHz
  • Collector Capacitance (Cc): 7 pF
  • Forward Current Transfer Ratio (hFE), MIN: 350
  • Noise Figure, dB: -
  • Package: TO18

Additional Information

Device Transistor
Type 30V 25V 200MA 70MN TO18
$0.11

Original: $0.36

-69%
BC178C—

$0.36

$0.11

Product Information

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Description

P 30V 25V 200MA 70MN TO18

P 30V 25V 200MA 70MN TO18

Specifications

  • Type Designator: BC178C
  • Material of Transistor: Si
  • Polarity: PNP
  • Maximum Collector Power Dissipation (Pc): 0.3 W
  • Maximum Collector-Base Voltage |Vcb|: 30 V
  • Maximum Collector-Emitter Voltage |Vce|: 25 V
  • Maximum Emitter-Base Voltage |Veb|: 5 V
  • Maximum Collector Current |Ic max|: 0.2 A
  • Operating Junction Temperature (Tj): 175 °C
  • Transition Frequency (ft): 100 MHz
  • Collector Capacitance (Cc): 7 pF
  • Forward Current Transfer Ratio (hFE), MIN: 350
  • Noise Figure, dB: -
  • Package: TO18

Additional Information

Device Transistor
Type 30V 25V 200MA 70MN TO18