2SB1344
P DAR + DI 100V 8A 40W TO-220Fa
P DAR + DI 100V 8A 40W TO-220Fa
Specifications
| Case | TO220F | |
| Type | Transistor Silicon PNP | |
| Manufacturer | Rohm Semiconductor | |
| Vbr CEO | 100 | |
| Max. PD (W) | 30 | |
| Max. hFE | 10k | |
| Min hFE | 1k | |
| Ic Max. (A) | 8 | |
| @Ic (test) (A) | 2 | |
| Mat. | Silicon Logic | |
| Polarity | PNP | |
| @VCE (test) | 3 | |
| Pinout Equivalence Number | 3-15 | |
| Surface Mounted Yes/No | NO | |
| Maximum Collector Power Dissipation (Pc) | 30 W | |
| Maximum Collector-Base Voltage |Vcb| | 120 V | |
| Maximum Collector-Emitter Voltage |Vce| | 120 V | |
| Maximum Emitter-Base Voltage |Veb| | 5 V | |
| Maximum Collector Current |Ic max| | 8 A | |
| Max. Operating Junction Temperature (Tj) | 175 °C | |
| Forward Current Transfer Ratio (hFE), MIN | 10000 | |
Additional Information
| Device | Transitor |
$0.07
Original: $0.23
-70%2SB1344—
$0.23
$0.07Product Information
Product Information
Shipping & Returns
Shipping & Returns
Description
P DAR + DI 100V 8A 40W TO-220Fa
P DAR + DI 100V 8A 40W TO-220Fa
Specifications
| Case | TO220F | |
| Type | Transistor Silicon PNP | |
| Manufacturer | Rohm Semiconductor | |
| Vbr CEO | 100 | |
| Max. PD (W) | 30 | |
| Max. hFE | 10k | |
| Min hFE | 1k | |
| Ic Max. (A) | 8 | |
| @Ic (test) (A) | 2 | |
| Mat. | Silicon Logic | |
| Polarity | PNP | |
| @VCE (test) | 3 | |
| Pinout Equivalence Number | 3-15 | |
| Surface Mounted Yes/No | NO | |
| Maximum Collector Power Dissipation (Pc) | 30 W | |
| Maximum Collector-Base Voltage |Vcb| | 120 V | |
| Maximum Collector-Emitter Voltage |Vce| | 120 V | |
| Maximum Emitter-Base Voltage |Veb| | 5 V | |
| Maximum Collector Current |Ic max| | 8 A | |
| Max. Operating Junction Temperature (Tj) | 175 °C | |
| Forward Current Transfer Ratio (hFE), MIN | 10000 | |
Additional Information
| Device | Transitor |
