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2SB1079

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2SB1079

P 100V 20A DARLGTN 100W TO3P

P 100V 20A DARLGTN 100W TO3P

Specifications

  • Polarity : PNP Darlington
  • Package : TO‑3P
  • Max Collector‑Base Voltage (VCBO) : –100 V
  • Max Collector‑Emitter Voltage (VCEO)    –80 V (Hitachi); sustaining –100 V (ISC) 
  • Max Emitter‑Base Voltage (VEBO) : –5 V
  • Max Collector Current (IC) : –20 A
  • Max Collector Power Dissipation (Pc) : 100 W
  • DC Current Gain (hFE) : ≥ 1 000 @ IC = –10 A 
  • hFE Max : ~20 k (source: LittleDiode) 
  • Max Junction Temperature (Tj) : 175 °C

Additional Information

Device Transistor
$0.40

Original: $1.32

-70%
2SB1079—

$1.32

$0.40

Product Information

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Description

P 100V 20A DARLGTN 100W TO3P

P 100V 20A DARLGTN 100W TO3P

Specifications

  • Polarity : PNP Darlington
  • Package : TO‑3P
  • Max Collector‑Base Voltage (VCBO) : –100 V
  • Max Collector‑Emitter Voltage (VCEO)    –80 V (Hitachi); sustaining –100 V (ISC) 
  • Max Emitter‑Base Voltage (VEBO) : –5 V
  • Max Collector Current (IC) : –20 A
  • Max Collector Power Dissipation (Pc) : 100 W
  • DC Current Gain (hFE) : ≥ 1 000 @ IC = –10 A 
  • hFE Max : ~20 k (source: LittleDiode) 
  • Max Junction Temperature (Tj) : 175 °C

Additional Information

Device Transistor