2SA968
P 160V 1.5A 25W 100MHZ TO220
SI-P 160V 1.5A 25W 100MHz
Specifications
- Type: PNP
- Collector-Emitter Voltage, max: -160 V
- Collector-Base Voltage, max: -160 V
- Emitter-Base Voltage, max: -5 V
- Collector Current − Continuous, max: -1.5 A
- Collector Dissipation: 25 W
- DC Current Gain (hfe): 70 to 240
- Transition Frequency, min: 100 MHz
- Operating and Storage Junction Temperature Range: -55 to +150 °C
- Package: TO-220
Additional Information
| Frequency Response | 100MHz |
| Import Data | SI-P 160V 1.5A 25W 100MHz |
| Keywords | BJT |
| Device | Transistor |
| Type | Bipolar Junction |
| Polarity | PNP |
| Material | Silicon |
| Power Dissipation | 25A |
$0.05
Original: $0.17
-71%2SA968—
$0.17
$0.05Product Information
Product Information
Shipping & Returns
Shipping & Returns
Description
P 160V 1.5A 25W 100MHZ TO220
SI-P 160V 1.5A 25W 100MHz
Specifications
- Type: PNP
- Collector-Emitter Voltage, max: -160 V
- Collector-Base Voltage, max: -160 V
- Emitter-Base Voltage, max: -5 V
- Collector Current − Continuous, max: -1.5 A
- Collector Dissipation: 25 W
- DC Current Gain (hfe): 70 to 240
- Transition Frequency, min: 100 MHz
- Operating and Storage Junction Temperature Range: -55 to +150 °C
- Package: TO-220
Additional Information
| Frequency Response | 100MHz |
| Import Data | SI-P 160V 1.5A 25W 100MHz |
| Keywords | BJT |
| Device | Transistor |
| Type | Bipolar Junction |
| Polarity | PNP |
| Material | Silicon |
| Power Dissipation | 25A |
