2SA509
P 35V 500MA
P 35V 500MA
Specifications
- Type Designator: 2SA509
- Material of Transistor: Si
- Polarity: PNP
- Maximum Collector Power Dissipation (Pc): 0.6 W
- Maximum Collector-Base Voltage |Vcb|: 35 V
- Maximum Collector-Emitter Voltage |Vce|: 30 V
- Maximum Emitter-Base Voltage |Veb|: 5 V
- Maximum Collector Current |Ic max|: 0.5 A
- Operating Junction Temperature (Tj): 150 °C
- Transition Frequency (ft): 70 MHz
- Collector Capacitance (Cc): 30 pF
- Forward Current Transfer Ratio (hFE), MIN: 70
- Noise Figure, dB: -
- Package: TO92
Additional Information
| Device | Transistor |
| Type | 35V 500MA |
$0.08
Original: $0.26
-69%2SA509—
$0.26
$0.08Product Information
Product Information
Shipping & Returns
Shipping & Returns
Description
P 35V 500MA
P 35V 500MA
Specifications
- Type Designator: 2SA509
- Material of Transistor: Si
- Polarity: PNP
- Maximum Collector Power Dissipation (Pc): 0.6 W
- Maximum Collector-Base Voltage |Vcb|: 35 V
- Maximum Collector-Emitter Voltage |Vce|: 30 V
- Maximum Emitter-Base Voltage |Veb|: 5 V
- Maximum Collector Current |Ic max|: 0.5 A
- Operating Junction Temperature (Tj): 150 °C
- Transition Frequency (ft): 70 MHz
- Collector Capacitance (Cc): 30 pF
- Forward Current Transfer Ratio (hFE), MIN: 70
- Noise Figure, dB: -
- Package: TO92
Additional Information
| Device | Transistor |
| Type | 35V 500MA |
