2SA1357
P 35V 5A 10W 170MHz
Specifications
- Type: PNP
- Collector-Emitter Voltage, max: -20 V
- Collector-Base Voltage, max: -35 V
- Emitter-Base Voltage, max: -8 V
- Collector Current − Continuous, max: -5 A
- Collector Dissipation: 10 W
- DC Current Gain (hfe): 100 to 320
- Transition Frequency, min: 170 MHz
- Operating and Storage Junction Temperature Range: -55 to +150 °C
- Package: TO-126F
Additional Information
| CatGroup | Transistor |
| Frequency Response | 170MHz |
| Import Data | SI-P 35V 5A 10W 170MHz |
| Keywords | BJT |
| Device | Transistor |
| Type | Bipolar Junction |
| Polarity | PNP |
| Material | Silicon |
| Power Dissipation | 10A |
$0.11
Original: $0.38
-71%2SA1357—
$0.38
$0.11Product Information
Product Information
Shipping & Returns
Shipping & Returns
Description
P 35V 5A 10W 170MHz
Specifications
- Type: PNP
- Collector-Emitter Voltage, max: -20 V
- Collector-Base Voltage, max: -35 V
- Emitter-Base Voltage, max: -8 V
- Collector Current − Continuous, max: -5 A
- Collector Dissipation: 10 W
- DC Current Gain (hfe): 100 to 320
- Transition Frequency, min: 170 MHz
- Operating and Storage Junction Temperature Range: -55 to +150 °C
- Package: TO-126F
Additional Information
| CatGroup | Transistor |
| Frequency Response | 170MHz |
| Import Data | SI-P 35V 5A 10W 170MHz |
| Keywords | BJT |
| Device | Transistor |
| Type | Bipolar Junction |
| Polarity | PNP |
| Material | Silicon |
| Power Dissipation | 10A |
