2SA1318
SI-P 60V 0.2A 0.5W 200MHz
Specifications
- Type: PNP
- Collector-Emitter Voltage, max: -50 V
- Collector-Base Voltage, max: -60 V
- Emitter-Base Voltage, max: -6 V
- Collector Current − Continuous, max: -0.2 A
- Collector Dissipation: 0.5 W
- DC Current Gain (hfe): 100 to 560
- Transition Frequency, min: 200 MHz
- Operating and Storage Junction Temperature Range: -55 to +150 °C
- Package: TO-92
Additional Information
| Frequency Response | 200MHz |
| Import Data | SI-P 60V 0.2A 0.5W 200MHz |
| Keywords | BJT |
| Device | Transistor |
| Type | Bipolar Junction |
$0.01
Original: $0.05
-80%2SA1318—
$0.05
$0.01Product Information
Product Information
Shipping & Returns
Shipping & Returns
Description
SI-P 60V 0.2A 0.5W 200MHz
Specifications
- Type: PNP
- Collector-Emitter Voltage, max: -50 V
- Collector-Base Voltage, max: -60 V
- Emitter-Base Voltage, max: -6 V
- Collector Current − Continuous, max: -0.2 A
- Collector Dissipation: 0.5 W
- DC Current Gain (hfe): 100 to 560
- Transition Frequency, min: 200 MHz
- Operating and Storage Junction Temperature Range: -55 to +150 °C
- Package: TO-92
Additional Information
| Frequency Response | 200MHz |
| Import Data | SI-P 60V 0.2A 0.5W 200MHz |
| Keywords | BJT |
| Device | Transistor |
| Type | Bipolar Junction |
