2N6372

N 90V 6A 40W TO66

Specifications

Mounting Style:	Through Hole
Package/Case:	TO-66-2
Transistor Polarity:	NPN
Configuration:	Single
Collector- Emitter Voltage VCEO Max:	80 V
Collector- Base Voltage VCBO:	90 V
Emitter- Base Voltage VEBO:	5 V
Collector-Emitter Saturation Voltage:	1 V
Pd - Power Dissipation:	40 W
Gain Bandwidth Product fT:	4 MHz
Minimum Operating Temperature:	- 65 C
Maximum Operating Temperature:	+ 200 C
Series:	2N6372
Brand:	Central Semiconductor
Continuous Collector Current:	6 A
DC Collector/Base Gain hFE Min:	25 at 0.5 A, 4 V
DC Current Gain hFE Max:	100 at 2 A, 4 V
Product Type:	BJTs - Bipolar Transistors

Device

Transistor

$5.29

2N6372—

$5.29

2N6372—

$5.29

N 90V 6A 40W TO66

Mounting Style:	Through Hole
Package/Case:	TO-66-2
Transistor Polarity:	NPN
Configuration:	Single
Collector- Emitter Voltage VCEO Max:	80 V
Collector- Base Voltage VCBO:	90 V
Emitter- Base Voltage VEBO:	5 V
Collector-Emitter Saturation Voltage:	1 V
Pd - Power Dissipation:	40 W
Gain Bandwidth Product fT:	4 MHz
Minimum Operating Temperature:	- 65 C
Maximum Operating Temperature:	+ 200 C
Series:	2N6372
Brand:	Central Semiconductor
Continuous Collector Current:	6 A
DC Collector/Base Gain hFE Min:	25 at 0.5 A, 4 V
DC Current Gain hFE Max:	100 at 2 A, 4 V
Product Type:	BJTs - Bipolar Transistors

Device

Transistor