2N5955

P 70V 6A 30MN TOP66

Specifications

Mounting Style:	Through Hole
Package/Case:	TO-66-2
Transistor Polarity:	NPN
Configuration:	Single
Collector- Emitter Voltage VCEO Max:	60 V
Collector- Base Voltage VCBO:	70 V
Emitter- Base Voltage VEBO:	5 V
Collector-Emitter Saturation Voltage:	1 V
Pd - Power Dissipation:	40 W
Gain Bandwidth Product fT:	4 MHz
Minimum Operating Temperature:	- 65 C
Maximum Operating Temperature:	+ 200 C
Series:	2N59
Brand:	Central Semiconductor
Continuous Collector Current:	6 A
DC Collector/Base Gain hFE Min:	20 at 3 A, 4 V
DC Current Gain hFE Max:	100 at 3 A, 4 V

Device

Transistor

$3.88

Original: $12.94

-70%

2N5955—

$12.94

$3.88

P 70V 6A 30MN TOP66

Mounting Style:	Through Hole
Package/Case:	TO-66-2
Transistor Polarity:	NPN
Configuration:	Single
Collector- Emitter Voltage VCEO Max:	60 V
Collector- Base Voltage VCBO:	70 V
Emitter- Base Voltage VEBO:	5 V
Collector-Emitter Saturation Voltage:	1 V
Pd - Power Dissipation:	40 W
Gain Bandwidth Product fT:	4 MHz
Minimum Operating Temperature:	- 65 C
Maximum Operating Temperature:	+ 200 C
Series:	2N59
Brand:	Central Semiconductor
Continuous Collector Current:	6 A
DC Collector/Base Gain hFE Min:	20 at 3 A, 4 V
DC Current Gain hFE Max:	100 at 3 A, 4 V

Device

Transistor