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2N5550

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2N5550

N 160V 140V 600MA 60/250 TO92

600MA NPN Transistor

Features

  • Type: NPN silicon transistor
  • Package: TO-92 plastic
  • Use: High-voltage, medium-current amplification and switching

    The 2N5550 is a high-voltage small-to-medium current NPN transistor suitable for audio, driver, and general-purpose circuits.

Specifications

  • Polarity : NPN
  • Collector-Emitter Voltage (Vceo) : 140 V
  • Collector-Base Voltage (Vcbo) : 160 V
  • Emitter-Base Voltage (Vebo) : 5 V
  • Collector Current (Ic max) : 600 mA
  • Power Dissipation (Ptot) : ~625 mW (TO-92)
  • Gain (hFE) : 60–250
  • Transition Frequency (ft) : 60–250 MHz
  • Package : TO-92 plastic
  • Operating Temperature : –55 °C to +150 °C

Additional Information

CatGroup Transistor
Device Transistor
$0.04
2N5550
$0.04

Product Information

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Description

N 160V 140V 600MA 60/250 TO92

600MA NPN Transistor

Features

  • Type: NPN silicon transistor
  • Package: TO-92 plastic
  • Use: High-voltage, medium-current amplification and switching

    The 2N5550 is a high-voltage small-to-medium current NPN transistor suitable for audio, driver, and general-purpose circuits.

Specifications

  • Polarity : NPN
  • Collector-Emitter Voltage (Vceo) : 140 V
  • Collector-Base Voltage (Vcbo) : 160 V
  • Emitter-Base Voltage (Vebo) : 5 V
  • Collector Current (Ic max) : 600 mA
  • Power Dissipation (Ptot) : ~625 mW (TO-92)
  • Gain (hFE) : 60–250
  • Transition Frequency (ft) : 60–250 MHz
  • Package : TO-92 plastic
  • Operating Temperature : –55 °C to +150 °C

Additional Information

CatGroup Transistor
Device Transistor