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2N5416

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2N5416

P 350V 300V 1A 30/120 TO39

P 350V 300V 1A 30/120 TO39 Transistor

Specifications

RoHS: N
Through Hole
TO-5-3
PNP
Single
300 V
350 V
6 V
2.5 V
1 A
1 W
- 65 C
+ 200 C
Brand: Microchip Technology
Continuous Collector Current: 1 A
DC Collector/Base Gain hFE Min: 15
DC Current Gain hFE Max: 120
Product Type: BJTs - Bipolar Transistors

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Additional Information

Device Transistor
$0.15
2N5416—
$0.15

Product Information

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Description

P 350V 300V 1A 30/120 TO39

P 350V 300V 1A 30/120 TO39 Transistor

Specifications

RoHS: N
Through Hole
TO-5-3
PNP
Single
300 V
350 V
6 V
2.5 V
1 A
1 W
- 65 C
+ 200 C
Brand: Microchip Technology
Continuous Collector Current: 1 A
DC Collector/Base Gain hFE Min: 15
DC Current Gain hFE Max: 120
Product Type: BJTs - Bipolar Transistors

Downloads

Additional Information

Device Transistor