2N3906
SI-P 40V 0.2A .35W 250MHz
Specifications
- Type : Bi-polar PNP transistor
- Collector emitter maximum voltage : 40V
- Emitter base maximum voltage : 5V
- Collector base maximum voltage : 40V
- Continuous collector current : 200mA
- Junction operating temperature range : -55 to 150C0
- Minimum forward current transfer ratio : 100
- Transition frequency : 250MHz
- Maximum collector current : 200mA
- Collector Capacitance : 5pF
- Maximum power dissipation : 250mW
- Storage temperature range : -55 to 150C0
- Collector emitter saturation voltage : 0.25V
- Dc Current gain:60
Downloads
Additional Information
| CatGroup | Transistor |
| Frequency Response | 250MHz |
| Import Data | SI-P 40V 0.2A .35W 250MHz |
| Keywords | BJT |
| Device | Transistor |
| Type | Bipolar Junction |
| Polarity | PNP |
| Material | Silicon |
| Power Dissipation | 0.31A |
$0.02
Original: $0.07
-71%2N3906—
$0.07
$0.02Product Information
Product Information
Shipping & Returns
Shipping & Returns
Description
SI-P 40V 0.2A .35W 250MHz
Specifications
- Type : Bi-polar PNP transistor
- Collector emitter maximum voltage : 40V
- Emitter base maximum voltage : 5V
- Collector base maximum voltage : 40V
- Continuous collector current : 200mA
- Junction operating temperature range : -55 to 150C0
- Minimum forward current transfer ratio : 100
- Transition frequency : 250MHz
- Maximum collector current : 200mA
- Collector Capacitance : 5pF
- Maximum power dissipation : 250mW
- Storage temperature range : -55 to 150C0
- Collector emitter saturation voltage : 0.25V
- Dc Current gain:60
Downloads
Additional Information
| CatGroup | Transistor |
| Frequency Response | 250MHz |
| Import Data | SI-P 40V 0.2A .35W 250MHz |
| Keywords | BJT |
| Device | Transistor |
| Type | Bipolar Junction |
| Polarity | PNP |
| Material | Silicon |
| Power Dissipation | 0.31A |
