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2N3767

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2N3767

N 100V 80V 4A 40/160 TO66

N 100V 80V 4A 40/160 TO66

Specifications

Transistor Type
NPN
Current - Collector (Ic) (Max)
4 A
Voltage - Collector Emitter Breakdown (Max)
80 V
Vce Saturation (Max) @ Ib, Ic
2.5V @ 100mA, 1A
Current - Collector Cutoff (Max)
500µA
DC Current Gain (hFE) (Min) @ Ic, Vce
40 @ 500mA, 5V
Power - Max
25 W
Operating Temperature
-65°C ~ 200°C (TJ)
Mounting Type
Through Hole
Package / Case
TO-213AA, TO-66-2

Additional Information

Device Transistor
$0.20
2N3767
$0.20

Product Information

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Description

N 100V 80V 4A 40/160 TO66

N 100V 80V 4A 40/160 TO66

Specifications

Transistor Type
NPN
Current - Collector (Ic) (Max)
4 A
Voltage - Collector Emitter Breakdown (Max)
80 V
Vce Saturation (Max) @ Ib, Ic
2.5V @ 100mA, 1A
Current - Collector Cutoff (Max)
500µA
DC Current Gain (hFE) (Min) @ Ic, Vce
40 @ 500mA, 5V
Power - Max
25 W
Operating Temperature
-65°C ~ 200°C (TJ)
Mounting Type
Through Hole
Package / Case
TO-213AA, TO-66-2

Additional Information

Device Transistor